📋 Tender Overview
The third issue of the quarterly format Research in Brief presents a curated selection of recent research results from the Ferdinand-Braun-Institut (FBH). The articles provide a concise overview of the institutes latest work. Apr 22, 2026, 9:31:22 AM Aiko Onken , Ferdinand-Braun-Institut gGmbH Leibniz-Institut fur Hochstfrequenztechnik This issue features contributions in photonics, III/V electronics, and III/V technology - including compact laser sources for quantum technologies, new approaches to spectroscopic data analysis, fast characterization methods for GaN devices, improved passivation concepts for high-frequency transistors, as well as advances in VCSEL structures and miniaturized vapor cells.The selection is based on the research news published every two weeks on the FBH website. These articles provide regular insights into new scientific results across the institutes research fields and document the continuous progress of FBH research.1. PhotonicsCompact laser modules below 620 nm enable scalable quantum and industrial applicationsWe have developed compact diode laser modules emitting at 619 nm - a wavelength crucial for quantum technologies and industrial use. These efficient, wavelength-stabilized sources enable scalable, miniaturized systems previously achievable only with complex solid-state lasers.Read more on the FBH website: https://fbhlink.de/ur96 Advanced chemometrics for accurate classification of spectroscopic dataWe developed an innovative peak finder approach for effective dimensionality reduction of spectroscopic data. It retains interpretability of results while outperforming selected state-of-the-art feature reduction methods in classification accuracy.Read more on the FBH website: https://fbhlink.de/ltx3 2. III/V-ElectronicsMHz load-line measurements for model parameter extractionReliable and rapid characterization of GaN HEMTs is essential for accurate models and circuit design. We have developed a MHz load-line technique that enables efficient extraction of compact model parameters, offering a fast alternative to conventional pulsed measurements.Read more on the FBH website: https://fbhlink.de/wda8 Tuning surface properties of dielectrics on InGaAs: on the passivation of InP HBTs for high-frequency devicesWe have developed a low-temperature ALD passivation for InP/InGaAs HBTs tailored to aggressively scaled devices. By improving surface control, the approach supports reliable millimeter-wave and sub-terahertz applications and leads to higher gain and improved RF performance.Read more on the FBH website: https://fbhlink.de/ihrd 3. III/V-TechnologyTunnel junction apertures by ion implantation: the impact of ion scattering on measurement resultsIon implantation can define tunnel-junction apertures in VCSELs without oxidation, but lateral proton straggle alters their effective size. By modelling this effect, we extract reliable specific resistances across different designs - without needing full layer or implantation details.Read more on the FBH website: https://fbhlink.de/8303 Microfabricated alkali vapor cells for compact atomic sensing applicationsAlkali vapor cells are a key component in many integrated atomic devices. Size, weight, reliability and production cost determine their applicability and economic viability. We have developed a technology for producing highly miniaturized vapor cells that meets the increasing demands of future mobile applications, including navigation, sensing, and telecommunications.Read more on the FBH website: https://fbhlink.de/vxqx
