Korea Republic Samsung Tender

Samsung Electronics the world leader in advanced memory technology as promised at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022 announced today that it has begun mass producing a 1-terabit Tb triple-level cell TLC eighth-generation Vertical NAND V-NAND with the industrys highest bit density. At 1Tb the new V-NAND also features the highest storage capacity to date enabling larger storage space in next-generation enterprise server systems worldwide.As market demand for denser greater-capacity storage pushes for higher V-NAND layer counts Samsung has adopted its advanced 3D scaling technology to reduce surface area and height while avoiding the cell-to-cell interference that normally occurs with scaling down said SungHoi Hur Executive Vice President of Flash Product Technology at Samsung Electronics. Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions which will be at the very foundation of future storage innovations.Samsung was able to attain the industrys highest bit density by significantly enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface the latest NAND flash standard Samsungs eighth-generation V-NAND features an input and output IO speed of up to 2.4 gigabits per second Gbps a 1.2X boost over the previous generation. This will enable the new V-NAND to accommodate the performance requirements of PCIe 4.0 and later PCIe 5.0.The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers while extending its use into the automotive market where reliability is especially critical.