📋 Tender Overview
Infineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the companys unique silicon-on-insulator SOI technology. The device provides leading negative VS transient immunity superior latch-up immunity fast over-current protection and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.The level-shift gate driver 6ED2230 provides 350 mA 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a -5 percent reference threshold accuracy provides fast repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 .Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout UVLO for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.
