📋 Tender Overview
Infineon Technologies AG expands its growing portfolio of single-channel gate-driver ICs. The new EiceDRIVER 1EDB family of single-channel gate-driver IC provides galvanic input-to-output isolation of 3 kV rms UL 1577 that ensures rugged ground-loop separation. Their common-mode transient immunity CMTI exceeds 300 Vns making these devices the perfect choice for hard switching applications enabling numerous topologies.The new 1EDB family includes four parts 1EDB6275F 1EDB7275F 1EDB8275F and 1EDB9275F and is optimized for both highlow-side applications. They can solve PCB-layout problems common in high-power applications such as server and telecom switched-mode power supplies SMPS as well as uninterruptable power supply UPS systems. Due to their increased power-density need EV-charging designs often require fast-switching power MOSFETs. Photovoltaic inverters take advantage of silicon carbide MOSFETs as they enable both lower switching losses and a significant step forward in power density. The new 1EDB family addresses all these applications ensuring high system efficiency and robust and safe system operation.All products come with separate and very low ohmic 0.95 source and 0.48 sink outputs for ease of design offering typical drive strengths of 5.4 A peak source and 9.8 A peak sink. This feature plays a vital role in reducing the switching losses of power MOSFETs. The input-to-output propagation delay accuracy is - 4 ns helping to cut switching losses which is essential in fast-switching applications. The typical output stage clamping speed is as short as 20 ns and supports functionally safe system operation especially during start-up.Designers can choose between four different output under-voltage lockout UVLO options0 V for logic-level MOSFETs 1EDB7275F0 V for normal-level MOSFETs 1EDB8275F12 V for CoolSiC MOSFETs 650 V 15 V driving scheme 1EDB6275F14 V for CoolSiC MOSFETs 650 V 18 V driving scheme 1EDB9275F
