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Contract awarded for Fully automated wafer electro chemical metal plating tool (izm-140) - pr1163163-3460-p lot-0000, title: fully automated wafer electro chemical metal plating tool (izm-140) - pr1163163-3460-p, description: 1 system: fully automated wafer electro chemical metal plating tool (izm-140) the following device specification defines a fully automated tool for the electrochemical deposition (ecd) of various metal layers on wafer substrates. the focus is on bumps with a high aspect ratio, redistribution layers (rdl), and the copper filling of silicon through-silicon vias (tsv) with a high aspect ratio. the wafer substrates are made of silicon and/or glass, have diameters of 200 and 300 mm, and a thickness of up to 2 mm. before the process, the wafers are transported to the tool in front opening unified pods (foups), which are manually placed by the operator onto the respective loading openings. the new tool must be capable of performing the following steps fully automatically: • unloading the designated wafers from the foup • performing the wet processes • unloading the wafers back to their original position in the foup the programming of recipes must be possible within a reasonable range of options and parameters required for research and development (r&d). the system to be procured with the new ecd chamber generation for galvanic processes enables flexible metal deposition of pillars with a high aspect ratio, tsv (complete filling/coating), damascene rdl/vias (e.g., for hybrid bonding), as well as high-density rdls with line/space distances of < 1 µm for 300-mm beol processes, with handling allowing the processing of thinned and bonded wafers and glass wafers (2.5d/3d systems) with high deformation and warping. the tool must enable galvanization and filling of higher aspect ratios and larger volumes. the connection metals required for these new applications are cu, ni, snag, au, and optionally in. optional features: - thinned wafer thickness range of 200 and 300 mm (si or glass): 300 ... 600 µm (lv- pos. 1.19.) - machine is prepared for wafer flip (lv- pos. 1.33.) - robot with edge gripper end effector (lv- pos. 1.34.) - chemical pre-cleaning and pre-wetting with deionized water for resist patterns (lv- pos. 2.21.) - inline inspection and cleaning of sealed ring contacts (lv- pos. 2.22.) - indium pattern galvanization (lv- pos. 2.28.) - single wafer spray process (lv- pos. 2.31.) - 2 x tanks with a capacity of at least 10 liters each for various pre-cleaning chemicals (lv- pos. 2.32.) - recovery mode (lv- pos. 2.33.) - overflow protection (lv- pos. 2.34.) - di water cleaning (lv- pos. 2.35.) - n2 drying (lv- pos. 2.36.) - single wafer (lv- pos. 2.82.) - tank volume of approximately 50 liters for electrolyte (lv- pos. 2.83) - n2 flushing (lv- pos. 2.84.) - tank heating/cooling 20 °c to 60 °c / ±2 °c (lv- pos. 2.85.) - overflow protection for tank and chamber (lv- pos. 2.86.) - inline filter housing (lv- pos. 2.87.) - dc power supply / stepwise adjustable ampere resolution / up to 50 amperes (lv- pos. 2.88.) - lifespan of the contact ring > 20,000 wafers / 2 mm sealing position / see appendix (lv- pos. 2.89.) - di water flushing (lv- pos. 2.90.) - inert anodes (lv- pos. 2.91.) - edge bead removal adjustable in a range of 2 mm to 5 mm (lv- pos. 2.108) estimated value excluding vat: -1.00 eur.Fully automated wafer electro chemical metal plating tool (izm-140) - pr1163163-3460-p
